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| SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 Symbol VDSS VDGR VGS HiPerFET MOSFET Test Conditions TJ=25 C to 150 C TJ=25 C to 150 C; RGS=1M Continuous Transient TC=25oC TC=25oC;pulse width limited by max. TJM TC=25oC Repetitive IS TJ IDM; -di/dt o o o o o Maximum Ratings 500 500 20 30 44N50 48N50 44N50 48N50 44 48 176 192 24 30 Unit V V A A A mJ V/ns W V A A W o VGSM ID25 IDM IAR EAR dv/dt PD VRRM 100A/us; VDD VDSS' 5 520 600 60 800 180 -40...+150 150 -40...+150 150 C; RG=2 TC=25oC TC=70 C; rectangular; d=0.5 tp <10us; pulse width limited by TJ TC=25 C o o DIODE IFAVM IFRM PD TJ TJM Tstg C CASE VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA Mounting torque t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 V~ Nm/Ib.in. g Terminal connection torque(M4) SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions VGS=0V; ID=1 mA VDS=VGS; ID=8 mA VGS=20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC VGS=10V; ID=0.5ID25 44N50 48N50 Pulse test, t 300us, duty cycle d Characteristic Values min. typ. max. 500 2 4 200 400 2 0.12 0.10 2% (TJ=25oC, unless otherwise specified) Symbol gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCK Ultra-fast Diode Symbol IR o Unit V V nA uA mA Test Conditions VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 22 42 8400 900 280 270 60 135 30 60 100 30 0.24 0.05 Unit S pF VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 nC ns ns ns ns K/W K/W VGS=10V; VDS=0.5VDSS; ID=0.5ID25 RG=1 (External) (TJ=25oC, unless otherwise specified) Test Conditions TJ=25 C; VR=VRRM VR=0.8VRRM TJ=125 C; VR=0.8VRRM o Characteristic Values min. typ. max. 200 100 14 Unit uA uA mA V ns A K/W K/W VF trr IRM RthJC RthJK IF=7A; VGS=0V; TJ=150 C Pulse test, t 300us, duty cycle d 2%; TJ=25 C 35 o o o 1.5 1.8 50 21 0.7 0.05 19 II=1A; di/dt= - 200A/us; VR=30V; TJ=25oC IF=60A; di/dt= - 480A/us; VR=350V; TJ=100 C |
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